Chemical Vapor Deposition

Equipment

Diamond growth capabilities include microwave plasma assisted chemical vapor deposition (MWPA-CVD) and hot filament chemical vapor deposition systems (HF-CVD). These systems are capable of growing the entire range of diamond materials from ultrananocrystalline diamond (UNCD), nanocrystalline diamond (NCD), microcrystalline diamond (MCD) and single crystalline diamond (SCD). Several systems are equipped with boron and phosporous precursors allowing for p-type and n-type semiconducting diamond growth.

2.45 GHz microwave plasma assisted chemical vapor deposition (MWPA-CVD)

Materials: UNCD, NCD, MCD and SCD

Maximum area: 3" diameter

3 x 2.45 GHz MWPA-CVD reactors for diamond synthesis (intrinsic)

1 x 2.45 GHz MWPA-CVD reactor for boron-doped (p-type, 5x1017 - 1x1021) diamond synthesis

1 x 2.45 GHz MWPA-CVD reactor for boron-doped (p-type, 1x1015 - 1x1018) diamond synthesis

1 x 2.45 GHz MWPA-CVD reactor for phosphorous-doped (n-type) diamond synthesis

 

915 MHz microwave plasma assisted chemical vapor deposition (MWPA-CVD)

Materials: UNCD, NCD, MCD and SCD

Maximum area: 8" diameter

1 x 915 MHz MWPA-CVD reactor for diamond synthesis

 

Hot Filament chemical vapor deposition (HF-CVD)

Material: MCD

Maximum area: 12" x 12"

1 x HF-CVD reactor

© Photo Fraunhofer CCD

Fraunhofer Scientist loading a CVD system